一种用于多腔室等离子处理装置的减少颗粒污染的方法

Particle pollution reducing method used for multi-chamber plasma processing device

Abstract

Provided is a particle pollution reducing method used for a multi-chamber plasma processing device. The plasma processing device at least comprises two chambers, and each chamber is provided with a cathode at a lower position. The cathode is connected with a radio frequency power source. Substrates are arranged on the chambers to process. The method comprises the following steps: (a) first process air is piped into the multiple chambers, and a first frequency is applied to the multiple chambers so that a plasma is stimulated to execute a first process on the substrates respectively; (c) a second frequency is applied to the chambers which complete the process first so that the plasma is maintained to be just at the no-put-out state; (e) second process air is piped into the multiple chambers, and a third frequency is applied to the multiple chambers so that the plasma is stimulated to execute the second process on the substrates respectively. Particle pollution of the plasma processing chambers can be substantially improved by the method, and stability and efficiency of the process are enhanced.
一种用于多腔室等离子处理装置的减少颗粒污染的方法,所述等离子处理装置至少包括两个腔室,每个腔室在较低位置处设有一个阴极,在所述阴极上连接有射频功率源,基片放置于腔室上进行制程,其中,所述方法包括如下步骤:(a)通入第一制程气体至多个腔室,同时施加第一频率于多个腔室,以激发等离子体分别对基片执行第一制程;(c)施加第二频率于先完成制程的腔室,以维持等离子体于刚好不熄灭状态;(e)通入第二制程气体至多个腔室,同时施加第三频率于多个腔室,以激发等离子体分别对基片执行第二制程。本发明能够显著改善等离子处理腔室的颗粒污染,并且提高了制程的稳定性和效率。

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Patent Citations (4)

    Publication numberPublication dateAssigneeTitle
    CN-101743341-AJune 16, 2010应用材料股份有限公司Systems for plasma enhanced chemical vapor deposition and bevel edge etching
    CN-202210507-UMay 02, 2012中芯国际集成电路制造(上海)有限公司等离子体反应器
    US-2011240114-A1October 06, 2011Applied Materials, Inc.Method of forming a negatively charged passivation layer over a diffused p-type region
    US-5855681-AJanuary 05, 1999Applied Materials, Inc.Ultra high throughput wafer vacuum processing system

NO-Patent Citations (0)

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Cited By (2)

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    CN-104538334-AApril 22, 2015中国地质大学(北京)一种多功能等离子体腔室处理系统
    CN-104538334-BAugust 08, 2017中国地质大学(北京)一种多功能等离子体腔室处理系统